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Mosfet K3878 TOSHIBA

Features

  • Low drain-source ON resistance : RDS (NO) = 1.0 Ω (typ.)
  • High forward transfer admittance : |Yfs| = 7.0 s (typ.)
  • Low leakage current : IDSS = 100 µA (max) (VDS = 720V)
  • Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10, ID = 1 mA)